RF front ends are advancing through the integration of high-frequency passive networks with increasingly efficient active devices engineered for ultra-wide bandwidths and constrained power envelopes.
Abstract: Micro-Electro-Mechanical System (MEMS) devices show better performance as compared to solid-state devices in terms of radio frequency (RF) response, like insertion loss and isolation.
Abstract: Advanced CMOS nodes suffer from low linearity due to limited breakdown voltages, while III-V semiconductors offer limited BEOL and integration capability, making it challenging to design ...
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